Controlling resolution of exposed resist in device lithography
USH102H · kind H · statutory invention registration
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17Claims
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| Filing date | — |
| Grant date | Aug 5, 1986 |
| Priority date | — |
| Expiry date | — |
Classification
- Technology area (CPC —)General
Abstract
In certain negative resists utilized for high-resolution lithography, cross-linking persists even after the exposing radiation is removed. This phenomenon causes exposed features to become enlarged. In accordance with the present invention, cross-linking in exposed resist regions is effectively quenched by purposely subjecting the exposed regions to oxygen immediately following exposure to cross-linking radiation. In, for example, full-field or step-and-repeat X-ray lithography, such quenching enables the consistent attainment of submicron features.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.