Method of reducing the surface leakage on a III-V semiconductor
USH1041H · kind H · statutory invention registration
2Cited by
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6Claims
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| Filing date | — |
| Grant date | Apr 7, 1992 |
| Priority date | — |
| Expiry date | — |
Classification
- Technology area (CPC —)General
Abstract
The surface leakage on a III-V semiconductor is reduced by selectively grng a mixed oxide on the surface of the semiconductor to passivate the semiconductor and reduce the surface leakage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.