Selection of crystal orientation in diamond film chemical vapor

USH1792H · kind H · statutory invention registration

Assignee

• United States of America as represented by the Secretary of the Air Force · US

Inventors

• Mark B. Moran · Ridgecrest, US
• Linda Johnson · Ridgecrest, US
• Karl A. Klemm · Largo, US

Key dates

• Grant date: Apr 6, 1999

Classification

• Technology area (CPC —): General

Abstract

In depositing an adhering, continuous, polycrystalline diamond film on a substrate by forming a refractory nitride interlayer on the substrate and depositing diamond on the interlayer in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon, the crystal orientation of the deposited diamond, <111> or <100>, is selected by controlling the pressure in the chamber. Preferably, relatively higher microwave power is utilized at higher pressures.