Lapped substrate for enhanced backsurface reflectivity in a

USH1856H · kind H · statutory invention registration

Assignee

• The United States of America as represented by the United States · US

Inventors

• Paul F. Baldasaro · Clifton Park, US
• Edward Brown · Clifton Park, US
• Greg W. Charache · Plainsboro, US
• David M. DePoy · Clifton Park, US

Key dates

• Grant date: Sep 5, 2000

Classification

• Technology area (CPC —): General

Abstract

A method for fabricating a thermophotovoltaic energy conversion cell including a thin semiconductor wafer substrate (10) having a thickness (.beta.) calculated to decrease the free carrier absorption on a heavily doped substrate; wherein the top surface of the semiconductor wafer substrate is provided with a thermophotovoltaic device (11), a metallized grid (12) and optionally an antireflective (AR) overcoating; and, the bottom surface (10') of the semiconductor wafer substrate (10) is provided with a highly reflecting coating which may comprise a metal coating (14) or a combined dielectric/metal coating (17).