Field shields for Schottky barrier devices
USH40H · kind H · statutory invention registration
Assignee
Inventors
Key dates
| Filing date | — |
| Grant date | Apr 1, 1986 |
| Priority date | — |
| Expiry date | — |
Classification
- Technology area (CPC —)General
Abstract
The present invention relates to an improved Schottky barrier device wherein the leakage current present in the reverse bias mode attributed to the presence of an electric field at the Schottky barrier (18) is significantly reduced by the inclusion of one or more field shields (22), P.sup.+ -type diffusions located under the metal anode (16) of the Schottky barrier device at the Schottky barrier (18). The P.sup.+ -type field shields, which are disposed in a pattern on the surface of the Schottky barrier, reduce the surface electric field present, thereby significantly reducing the leakage current related thereto.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.