Technique for increasing oxygen incorporation during silicon Czochralski

USH520H · kind H · statutory invention registration

Inventors

• David L. Johnson · Bethlehem, US
• Robert J. Lavigna · Bath, GB
• Wen-Fei Lin · Allentown, US
• Raymond J. Newman · Hopewell, US
• Subramani Rajaram · Hamme, BE
• Joseph Charles Veshinfsky · Catasauqua, US
• George J. Williams · Doylestown, US

Key dates

• Grant date: Sep 6, 1988

Classification

• Technology area (CPC —): General

Abstract

A glass crucible (30) for containing a material from which a silicon crystal melt is produced, wherein the inside surface area of the crucible is increased to react with the silicon melt (31) to increase the oxygen content thereof. The inside surface area may be increased by incorporating inwardly directed silica ribs (40) or concentric, hollow silica cylinders (32) as well as forming corrugations (45) or undulations on the inside surface thereof.