High average power pockels cell
USH868H · kind H · statutory invention registration
5Cited by
0References
3Claims
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Inventor
Key dates
| Filing date | — |
| Grant date | Jan 1, 1991 |
| Priority date | — |
| Expiry date | — |
Classification
- Technology area (CPC —)General
Abstract
A high average power pockels cell is disclosed which reduces the effect of thermally induced strains in high average power laser technology. The pockels cell includes an elongated, substantially rectangular crystalline structure formed from a KDP-type material to eliminate shear strains. The X- and Y-axes are oriented substantially perpendicular to the edges of the crystal cross-section and to the C-axis direction of propagation to eliminate shear strains.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.