IR detector structure and method of making
USH894H · kind H · statutory invention registration
2Cited by
0References
8Claims
0Family size
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Inventor
Key dates
| Filing date | — |
| Grant date | Mar 5, 1991 |
| Priority date | — |
| Expiry date | — |
Classification
- Technology area (CPC —)General
Abstract
An IR detector structure is made from a CdTe substrate by polishing the C subtrate, and transferring the cleaned substrate to a chamber for successive epitaxial growth of HgCdTe and CdTe layers insitu without removal reducing contamination at the interfaces due to exposure to the atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.