Semiconductor-semiconductor compound insulator-insulator structures
USH948H · kind H · statutory invention registration
Assignee
Inventor
Key dates
| Filing date | — |
| Grant date | Aug 6, 1991 |
| Priority date | — |
| Expiry date | — |
Classification
- Technology area (CPC —)General
Abstract
A process for the interdisposition of a semiconductor compound by high dose oxygen ion implantation after a high quality single crystal semiconductor film has been formed on an insulator substrate. Specifically, in one embodiment, after the formation of a single crystal silicon semiconductor film on an insulator substrate of either sapphire or spinel, oxygen ion implantation is formed to create a silicon dioxide layer at the interface between the silicon semiconductor film and the insulator substrate in order to reduce the interface states and form a diffusion barrier between the semiconductor material and the electrical insulator substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.