Field effect-transistor with asymmetrical structure

USH986H · kind H · statutory invention registration

Assignee

• International Business Machines Corporation · US

Inventors

• Christopher F. Codella · Marlboro, US
• Nivo Rovedo · Lagrangeville, US
• Seiki Ogura · Wappingers Falls, US

Key dates

• Grant date: Nov 5, 1991

Classification

• Technology area (CPC —): General

Abstract

A field effect transistor of asymmetrical structure comprises: a semiconductor substrate of first conductivity type; source and drain regions of second conductivity type disposed in a surface of the substrate and spaced apart by a channel region; and a single, lightly doped extension of the drain region into the channel, the extension being of the second conductivity type and of a lower dopant concentration than the drain region. The transistor can further beneficially comprise a halo region of the first conductivity type in the substrate generally surrounding only the source region.