Semiconductor devices
USRE28704E · kind E · reissue
3Cited by
6References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 22, 1974 |
| Grant date | Feb 3, 1976 |
| Priority date | — |
| Expiry date | Mar 22, 1994 |
Classification
- Technology area (CPC —)General
Abstract
A method for making an IGFET is described. The method utilizes impurity ion implantation into the surface channel to determine the conductivity thereof. The advantages include special impurity profiles providing improved performance, better control over important parameters such as threshold voltage, the manufacture of improved tetrodes, and the manufacture of improved ICs using for example N- and P-channel devices, and depletion and enhancement devices combined in a single chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.