Monolithic semiconductor switching device
USRE33209E · kind E · reissue
3Cited by
8References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 5, 1983 |
| Grant date | May 1, 1990 |
| Priority date | — |
| Expiry date | Dec 5, 2003 |
Classification
- Technology area (CPC —)General
Abstract
An electrical circuit device made in integrated monolithic form has low level operating characteristics of a MOS device and high level operating characteristics of a Triac. The structure includes two double diffused MOS transistors which have merged drain regions. At higher voltage and current levels a lateral Triac structure is triggered by the MOS devices. Alternatively, separate terminal contacts can be made to the P and N regions comprising the MOS transistor source and channel regions with the Triac triggered conventionally by an externally applied control voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.