Method of making symmetrically controlled implanted regions using rotational angle of the substrate
USRE35036E · kind E · reissue
5Cited by
12References
10Claims
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Key dates
| Filing date | Jan 14, 1993 |
| Grant date | Sep 12, 1995 |
| Priority date | — |
| Expiry date | Jan 14, 2013 |
Classification
- Technology area (CPC —)General
Abstract
A method of fabricating a field effect transistor, wherein impurity diffusion layers of source and drain are formed by an ion implantation method using the gate electrode as the mask by inclining the semiconductor substrate with respect to the ion beam incident direction so as to prevent the channeling effect and also rotating it in planarity with respect to the ion beam scanning plane. As a result, impurity diffusion layers can be formed symmetrically with respect to the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.