Apparatus for growing metal oxides using organometallic vapor phase epitaxy
USRE36295E · kind E · reissue
Assignee
Inventors
Key dates
| Filing date | Oct 16, 1997 |
| Grant date | Sep 14, 1999 |
| Priority date | — |
| Expiry date | Oct 16, 2017 |
Classification
- Technology area (CPC —)General
Abstract
The methods and apparatus disclosed enable controlled growth of multicomponent metal oxide thin films, including high temperature superconducting (HTS) thin films, which are uniform and reproducible. The method and apparatus enable a controlled flow and pressure of a gaseous phase of metal containing molecules to be introduced into a reaction chamber, or into an analysis chamber, or into both. The flow into the reaction chamber enables deposition of metal oxides on a substrate and, therefore, growth of multicomponent metal oxide thin films, including HTS thin films, on the substrate. The flow into the analysis chamber enables compositional analysis of the gas. The apparatus also allows adjustment of the gaseous phase flow and pressure into the reaction chamber based upon the results of the compositional analysis. In one aspect of this invention, a heating mantle provides substantially uniform heating throughout the apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.