Microstructure design for high IR sensitivity
USRE36706E · kind E · reissue
16Cited by
26References
28Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 14, 1996 |
| Grant date | May 23, 2000 |
| Priority date | — |
| Expiry date | Feb 14, 2016 |
Classification
- Technology area (CPC —)General
Abstract
A microstructure design for high IR sensitivity having a two level infrared bolometer microstructure, the lower level having a reflective metal film surface such as Pt, Au, or Al to reflect IR penetrating to that level, the upper level being separated from the lower level by an air gap of about 1-2 microns which allows the reflected IR to interfere with the incident IR and increase the sensitivity to a higher level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.