Process for the production of thin semiconductor material films
USRE39484E1 · kind E1 · reissue
Assignee
Inventor
Key dates
| Filing date | May 30, 2003 |
| Grant date | Feb 6, 2007 |
| Priority date | — |
| Expiry date | May 30, 2023 |
Classification
- Technology area (CPC —)General
Abstract
Process for the preparation of thin monocrystalline or polycrystalline semiconductor material films, characterized in that it comprises subjecting a semiconductor material wafer having a planar face to the three following stages: a first stage of implantation by bombardment (2) of the face (4) of the said wafer (1) by means of ions creating in the volume of said wafer a layer (3) of gaseous microbubbles defining in the volume of said wafer a lower region (6) constituting the mass of the substrate and an upper region (5) constituting the thin film, a second stage of intimately contacting the planar face (4) of said wafer with a stiffener (7) constituted by at least one rigid material layer, a third stage of heat treating the assembly of said wafer (1) and said stiffener (7) at a temperature above that at which the ion bombardment (2) was carried out and sufficient to create by a crystalline rearrangement effect in said wafer (1) and a pressure effect in the said microbubbles, a separation between the thin film (5) and the mass of the substrate (6).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.