S-band low-noise amplifier with self-adjusting bias for improved power consumption and dynamic range in a mobile environment
USRE41582E1 · kind E1 · reissue
Assignee
Inventors
Key dates
| Filing date | May 11, 2006 |
| Grant date | Aug 24, 2010 |
| Priority date | — |
| Expiry date | May 11, 2026 |
Classification
- Technology area (CPC —)General
Abstract
A discrete low-noise amplifier designed to operate in a mobile wireless environment uses two cascaded GaAs FETs to achieve 25 dB gain and 0.9 dB noise figure at 2.5 GHz. Active bias control circuitry responsive to monitored amplifier output power automatically and continuously adjusts the drain-source currents, and the load lines, of the cascaded FETs to (i) maintain power consumption at 33 milliwatts in nominal small-signal conditions, and to (ii) provide an elevated input third-order intermodulation intercept point (IP3) and a reduced noise figure during the presence of jamming. A 15 dB improvement in the input IP3 is achieved in large-signal operation. Amplifier operation is supported by an a.c. power detector of enhanced sensitivity and responsiveness because of un-grounded operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.