Non-volatile memory comprising means for distorting the output of memory cells

USRE42144E1 · kind E1 · reissue

Assignee

• STMicroelectronics SA

Inventor

• Mathieu Lisart · Aix-en-Provence, FR

Key dates

• Filing date: Jul 30, 2009
• Grant date: Feb 15, 2011
• Expiry date: Jul 30, 2029

Classification

• Technology area (CPC —): General

Abstract

The present invention relates to a non-volatile memory comprising a memory array comprising functional memory cells and non-functional memory cells linked to at least one non-functional word line. A word line address decoder comprises a special decoding section linked to the non-functional word line, for selecting the non-functional word line when a functional word line is read-selected, such that non-functional memory cells are selected simultaneously with the functional memory cells, and distort the reading of the functional memory cells. Application particularly to integrated circuits for smart cards.