Window for gallium nitride light emitting diode

USRE42636E1 · kind E1 · reissue

Assignee

• Dalian Lumei Optoelectronics Corporation · CN

Inventors

• John Chen · Walnut, US
• Bingwen Liang · Sunnyvale, US
• Robert Shih · Hsinchu, TW

Key dates

• Filing date: Apr 5, 2010
• Grant date: Aug 23, 2011
• Expiry date: Apr 5, 2030

Classification

• Technology area (CPC —): General

Abstract

A window structure for a gallium nitride (GaN)-based light emitting diode (LED) includes a Mg+ doped p window layer of a GaN compound; a thin, semi-transparent metal contact layer; and an amorphous current spreading layer formed on the contact layer. The contact layer is formed of NiOx/Au and the current spreading layer is formed of Indium Tin Oxide. The p electrode of the diode includes a titanium adhesion layer which forms an ohmic connection with the current spreading layer and a Schottky diode connection with the Mg+ doped window layer.