Fabrication method of transparent electrode on visible light-emitting diode
USRE43426E1 · kind E1 · reissue
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2011 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Jun 2, 2031 |
Classification
- Technology area (CPC —)General
Abstract
A method for forming a transparent electrode on a visible light-emitting diode is described. A visible light-emitting diode element is provided, and the visible light-emitting diode element has a substrate, an epitaxial structure and a metal electrode. The metal electrode and the epitaxial structure are located on the same side of the substrate, or located respectively on the different sides of the substrate. An ohmic metal layer is formed on a surface of the epitaxial structure. The ohmic metal layer is annealed. The ohmic metal layer is removed to expose the surface of the epitaxial structure. A transparent electrode layer is formed on the exposed surface. A metal pad is formed on the transparent electrode layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.