Silicon carbide semiconductor device
USRE43840E1 · kind E1 · reissue
1Cited by
1References
9Claims
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Key dates
| Filing date | Oct 21, 2010 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Oct 21, 2030 |
Classification
- Technology area (CPC —)General
Abstract
A silicon carbide (SiC) substrate is provided with an off-oriented {0001} surface whose off-axis direction is <11-20>. A trench is formed on the SiC to have a stripe structure extending toward a <11-20> direction. An SiC epitaxial layer is formed on an inside surface of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.