Buffer compositions
USRE44853E1 · kind E1 · reissue
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2012 |
| Grant date | Apr 22, 2014 |
| Priority date | — |
| Expiry date | Apr 18, 2032 |
Classification
- Technology area (CPC —)General
Abstract
Buffer compositions comprising semiconductive oxide particles and at least one of (a) a fluorinated acid polymer and (b) a semiconductive polymer doped with a fluorinated acid polymer are provided. Semiconductive oxide particles include metal oxides and bimetallic oxides. Acid polymers are derived from monomers or comonomers of polyolefins, polyacrylates, polymethacrylates, polyimides, polyamides, polyaramides, polyacrylamides, polystrenes. The polymer backbone, side chains, pendant groups or combinations thereof may be fluorinated or highly fluorinated. Semiconductive polymers include polymers or copolymers derived from thiophenes, pyrroles, anilines, and polycyclic heteroaromatics. Methods for preparing buffer compositions are also provided. A buffer composition consisting essentially of semiconductive oxide particles wherein the semiconductive oxide particles comprise a bimetallic oxide selected from indium-tin oxide (“ITO”), indium-zinc oxide (“IZO”), gallium-indium oxide, and zinc-antimony double oxide and a fluorinated acid polymer wherein the fluorinated acid polymer has a formula according to Formula XV:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.