Semiconductor laser diode and method of manufacturing the same
USRE45071E1 · kind E1 · reissue
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2011 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Mar 24, 2031 |
Classification
- Technology area (CPC —)General
Abstract
Provided are a semiconductor laser diode and a method of manufacturing the same. The semiconductor laser diode includes a lower cladding layer disposed on a substrate; a ridge including an optical waveguide layer, an active layer, an upper cladding layer, and an ohmic contact layer, which are sequentially stacked on the lower cladding layer, and having a predetermined width, which is obtained by performing a channel etching process on both sides of the ridge; an oxide layer disposed on surfaces of the upper and lower cladding layer to control the width of the ridge; a dielectric layer disposed on left and right channels of the ridge; an upper electrode layer disposed on the entire surface of the resultant structure to enclose the ridge and the dielectric layer; and a lower electrode layer disposed on a bottom surface of the substrate. The method is simpler than a conventional process of manufacturing a semiconductor laser diode. Also, by controlling a wet oxidation time, the width of a ridge can be freely controlled and an ohmic contact layer can be automatically formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.