Semiconductor light emitting device with transparent electrode having holes
USRE45217E1 · kind E1 · reissue
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2008 |
| Grant date | Oct 28, 2014 |
| Priority date | — |
| Expiry date | Sep 16, 2028 |
Classification
- Technology area (CPC —)General
Abstract
A semiconductor light emitting device and a fabrication method thereof includes: providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and forming a first pad on the first transparent electrode. A method of fabricating a semiconductor light emitting device, and which includes forming a light emitting layer on the first type semiconductor layer; forming a second type semiconductor layer on the light emitting layer; forming a first transparent electrode on the second type semiconductor layer, the first transparent electrode having holes per a certain region to thereby expose the second type semiconductor layer; forming a second transparent electrode on the first transparent electrode; forming a first pad on the second transparent electrode; and forming a second pad over the first type semiconductor layer. Further, the first transparent electrode is in the shape of columns with gaps therebetween on the second type semiconductor layer, and the second transparent electrode completely covers the first tra…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.