Laser ablation of electronic devices
USRE45885E1 · kind E1 · reissue
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2014 |
| Grant date | Feb 9, 2016 |
| Priority date | — |
| Expiry date | Apr 23, 2034 |
Classification
- Technology area (CPC —)General
Abstract
A method of fabricating an electronic device, the device including a plurality of layers on a substrate, the layers including an upper conductive layer and at least one patterned underlying layer between said conductive layer and said substrate. The method includes patterning said underlying layer, and patterning said upper conductive layer by laser ablation using a stepwise process in which successive areas of said upper conductive layer are ablated by successively applied laser patterns. The successively applied laser patterns overlap one another in an overlap region. The method further includes configuring a said laser pattern and said patterned underlying layer with respect to one another such that in a said overlap region said patterned underlying layer is substantially undamaged by said stepwise laser ablation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.