Non-volatile semiconductor storage device
USRE46526E1 · kind E1 · reissue
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2014 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | Oct 22, 2034 |
Classification
- Technology area (CPC —)General
Abstract
A non-volatile semiconductor storage device includes: a memory cell array having memory cells arranged therein, the memory cells storing data in a non-volatile manner; and a plurality of transfer transistors transferring a voltage to the memory cells, the voltage to be supplied for data read, write and erase operations with respect to the memory cells. Each of the transfer transistors includes: a gate electrode formed on a semiconductor substrate via a gate insulation film; and diffusion layers formed to sandwich the gate electrode therebetween and functioning as drain/source layers. Upper layer wirings are provided above the diffusion layers and provided with a predetermined voltage to prevent depletion of the diffusion layers at least when the transfer transistors become conductive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.