Semiconductor device with a protection diode
USRE47390E1 · kind E1 · reissue
Assignee
Inventor
Key dates
| Filing date | Sep 10, 2014 |
| Grant date | May 14, 2019 |
| Priority date | — |
| Expiry date | Sep 10, 2034 |
Classification
- Technology area (CPC —)General
Abstract
According to one embodiment, a semiconductor device includes a semiconductor substrate, a semiconductor region, a first and second electrodes. The semiconductor region is provided on the semiconductor substrate via an insulating film. The semiconductor region includes a protection diode. An overvoltage causes breakdown of the protection diode. A PN junction of the protection diode is exposed at an end face of the semiconductor region. A first and second electrodes are provided distally to the exposed end face of the PN junction. The first and second electrodes are connected to the semiconductor region to provide a current to the protection diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.