Patent · US Active

Luminescent layer and light-emitting semiconductor device

USRE47453E1 · kind E1 · reissue

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20References
11Claims
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Key dates

Filing dateJul 5, 2016
Grant dateJun 25, 2019
Priority date
Expiry dateJul 5, 2036

Classification

  • Technology area (CPC —)General

Abstract

A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0≤a1≤0.3, 0≤b1≤0.8 and 0<x<1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.