Thin-film semiconductor substrate, light-emitting panel, and method of manufacturing the thin-film semiconductor substrate
USRE48032E1 · kind E1 · reissue
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2017 |
| Grant date | Jun 2, 2020 |
| Priority date | — |
| Expiry date | Sep 28, 2037 |
Classification
- Technology area (CPC —)General
Abstract
A thin-film semiconductor substrate includes a top-gate first TFT, a top-gate second TFT, and a data line (source line), in which the first TFT has a first semiconductor layer, a first gate insulating film, a first gate electrode, a first source electrode, a first drain electrode, and a first protection layer, the second TFT has a second semiconductor layer, a second gate insulating film, a second gate electrode, a second source electrode, a second drain electrode, and a second protection layer, the data line is connected to the first source electrode, the first drain electrode is an extension of the second gate electrode, and the second gate electrode is thinner than the data line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.