Process and system for uniformly crystallizing amorphous silicon substrate by fiber laser
USRE48398E1 · kind E1 · reissue
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2019 |
| Grant date | Jan 19, 2021 |
| Priority date | — |
| Expiry date | Aug 8, 2039 |
Classification
- Technology area (CPC —)General
Abstract
The inventive system for crystallizing an amorphous silicon (a-Si) film is configured with a quasi-continuous wave fiber laser source operative to emit a film irradiating pulsed beam. The fiber laser source is operative to emit a plurality of non-repetitive pulses incident on the a-Si. In particular, the fiber laser is operative to emit multiple discrete packets of film irradiating light at a burst repetition rate (BRR), and a plurality of pulses within each packet emitted at a pulse repetition rate (PRR) which is higher than the BRR. The pulse energy, pulse duration of each pulse and the PRR are controlled so that each packet has a desired packet temporal power profile (W/cm2) and packet energy sufficient to provide transformation of a-Si to polysilicon (p-Si) at each location of the film which is exposed to at least one packets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.