Field effect transistor having fin base and at least one fin protruding from fin base

USRE49375E1 · kind E1 · reissue

Assignee

• SAMSUNG ELECTRONICS CO., LTD. · KR

Inventors

• Myeong-Cheol Kim · Aachen, DE
• Cheol Joong Kim · Daejeon, KR
• Jaehun Seo · Suwon-si, KR
• Yoojung Lee · Yongin-si, KR
• Kisoo Chang · Yongin-si, KR
• Siyoung Choi · Seongnam-si, KR

Key dates

• Filing date: Dec 21, 2020
• Grant date: Jan 17, 2023
• Expiry date: Dec 21, 2040

Classification

• Technology area (CPC —): General

Abstract

Field effect transistors including a source region and a drain region on a substrate, a fin base protruding from a top surface of the substrate, a plurality of fin portions extending upward from the fin base and connecting the source region with the drain region, a gate electrode on the fin portions, and a gate dielectric between the fin portions and the gate electrode may be provided. A top surface of the substrate may include a plurality of grooves (e.g., a plurality of convex portions and a plurality of concave portions). Further, a device isolation layer may be provided to expose upper portions of the plurality of fin portions and to cover top surfaces of the plurality of grooves.