Semiconductor device
USRE50035E1 · kind E1 · reissue
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2022 |
| Grant date | Jul 9, 2024 |
| Priority date | — |
| Expiry date | Mar 7, 2042 |
Classification
- Technology area (CPC —)General
Abstract
By stably separating a melting location of a fuse (3) from conductive layers (5A, 5B), reliable melting of the fuse (3) is enabled. A fuse (3) including a fuse body (3A) and two pads (3Ba, 3Bb) connected by this and two conductive layers (5A, 5B) individually connected to the two pads (3Ba, 3Bb) are formed in a multilayer structure on a semiconductor substrate (1). A length of the fuse body (3A) is defined so that the melting location of the fuse (3) becomes positioned in the fuse body (3A) away from the region overlapped on the conductive layer (5A or 5B) when an electrical stress is applied between two conductive layers (5A, 5B) and the fuse (3) is melted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.