Electron beam resist composition
USRE50296E1 · kind E1 · reissue
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7References
56Claims
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Key dates
| Filing date | Jul 21, 2021 |
| Grant date | Feb 11, 2025 |
| Priority date | — |
| Expiry date | Jul 21, 2041 |
Classification
- Technology area (CPC —)General
Abstract
The present invention relates to an electron beam (eBeam) resist composition, particularly an (eBeam) resist composition for use in the fabrication of integrated circuits. Such resist compositions include an anti-scattering compound which minimises scattering and secondary electron generation, thus affording extremely high resolution lithography. Such high resolution lithography may be used directly upon silicon-based substrates to produce integrated circuits, or may alternatively be used to produce a lithographic mask (e.g. photomask) to facilitate high-resolution lithography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.