Radiation-tolerant unit MOSFET hardened against single event effect and total ionization dose effect

USRE50525E1 · kind E1 · reissue

Assignee

• KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY · KR

Inventors

• Hee Chul Lee · Daejeon, KR
• Young Tak Roh · Daejeon, KR

Key dates

• Filing date: Aug 25, 2022
• Grant date: Aug 5, 2025
• Expiry date: Aug 25, 2042

Classification

• Technology area (CPC —): General

Abstract

Provided is a radiation-tolerant 3D unit MOSFET having at least one selected from a dummy drain (DD), an N-well layer (NW), a deep N-well layer (DNW), and a P+ layer to minimize an influence by a total ionization dose effect and an influence by a single event effect.