EpiWorks, Inc.
4Patents
3Active
4Granted
39Portfolio score
Filing activity: Jun 18, 2001 → Aug 18, 2017
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6525349B2 | Heterojunction bipolar transistor with tensile graded carbon-doped base layer grown by MOCVD | Electricity | 5 | Expired |
| US8951827B2 | Manufacturing semiconductor-based multi-junction photovoltaic devices | Emerging Cross-Sectional Technologies | 1 | Active |
| US10283666B2 | Manufacturing semiconductor-based multi-junction photovoltaic devices | Emerging Cross-Sectional Technologies | 0 | Active |
| US9972737B2 | Manufacturing semiconductor-based multi-junction photovoltaic devices | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.