Heterojunction bipolar transistor with tensile graded carbon-doped base layer grown by MOCVD
US6525349B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 18, 2001 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Aug 1, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/854
Abstract
A heterojunction bipolar transistor (HBT), having a substrate formed of indium phosphide (InP), and having emitter, base and collector layers formed over the substrate such that the base layer is disposed between the emitter and collector layers. The collector layer formed from InGaAs, and the collector layer being doped n-type. The emitter layer formed from InP, and the emitter layer being doped n-type. The base layer formed of indium gallium arsenide (InGaAs) and grown by MOCVD, the base layer being tensile strained and graded, and the base layer being doped p-type with carbon. A lattice mismatch, for at least a portion of the base layer, between the substrate and the base material is greater than 0.2%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.