Epsilon Limited Partnership
4Patents
0Active
4Granted
28Portfolio score
Filing activity: Oct 7, 1985 → Mar 14, 1988
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4789771A | Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus | Chemistry; Metallurgy | 82 | Expired |
| US4798165A | Apparatus for chemical vapor deposition using an axially symmetric gas flow | Chemistry; Metallurgy | 70 | Expired |
| US4654509A | Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus | Chemistry; Metallurgy | 45 | Expired |
| US4874464A | Process for epitaxial deposition of silicon | Emerging Cross-Sectional Technologies | 19 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.