Process for epitaxial deposition of silicon
US4874464A · kind A · utility
19Cited by
2References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 1988 |
| Grant date | Oct 17, 1989 |
| Priority date | — |
| Expiry date | Mar 14, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a high throughput single crystal epitaxial deposition process which achieves increased uniformity, both wafer to wafer and across the wafer surface. There is provided an epitaxial deposition process characterized by low-level cooling periods which minimize temperature changes between deposition cycles and inter-cycle cleaning so that each new wafer is presented with a substantially equivalent deposition environment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.