Interuniversitair Nizroelecmica
1Patents
0Active
1Granted
26Portfolio score
Filing activity: Dec 8, 2003 → Dec 8, 2003
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6852635B2 | Method for bottomless deposition of barrier layers in integrated circuit metallization schemes | Electricity | 95 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.