Will Semiconductor Ltd.
1Patents
1Active
1Granted
41Portfolio score
Filing activity: Jun 4, 2010 → Jun 4, 2010 · 1 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8697518B2 | Trench MOSFET with trench contact holes and method for fabricating the same | Electricity | 8 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.