Trench MOSFET with trench contact holes and method for fabricating the same

US8697518B2 · kind B2 · utility

Assignee

• Will Semiconductor Ltd. · CN

Inventors

• Gang Ji · Santa Clara, US
• Jianping Gu · Shanghai, CN
• Kaibin Ni · Shanghai, CN
• Tianbing Zhong · Shanghai, CN

Key dates

• Filing date: Jun 4, 2010
• Grant date: Apr 15, 2014
• Expiry date: Oct 13, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/517

Abstract

A trench MOSFET with trench contact holes and a method for fabricating the same are disclosed. The MOSFET includes an N type substrate, an N type epitaxial layer on the substrate; a P well region on top of the epitaxial layer; a source region formed on the P well region; an oxide layer on the source region; a plurality of trenches which traverse the source region and the P well region and contact the epitaxial layer; a gate oxide layer and polysilicon formed in the trenches; a source contact hole and a gate contact hole, wherein the source contact hole and the gate contact hole have a titanium metal layer, a titanium nitride layer, and tungsten metal sequentially, respectively; a P+ implanted region; a source electrode formed above the source contact hole and a gate electrode formed above the gate contact hole.