Yangtze Memory Technology Co., Ltd.
1Patents
1Active
1Granted
43Portfolio score
Filing activity: Mar 23, 2018 → Mar 23, 2018
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10283452B2 | Three-dimensional memory devices having a plurality of NAND strings | Electricity | 46 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.