Three-dimensional memory devices having a plurality of NAND strings

US10283452B2 · kind B2 · utility

Assignee

• Yangtze Memory Technology Co., Ltd. · CN

Inventors

• Jifeng Zhu · Hubei, CN
• Zhenyu Lu · Hubei, CN
• Jun Chen · Hubei, CN
• Yushi Hu · 红钢城街道, CN
• Qian Tao · Singapore, SG
• Simon Shi-Ning Yang · Portland, US
• Steve Wiyi Yang · 東區, TW

Key dates

• Filing date: Mar 23, 2018
• Grant date: May 7, 2019
• Expiry date: Mar 23, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/5329
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of three-dimensional (3D) memory devices and methods for forming the 3D memory devices are disclosed. In an example, a NAND memory device includes a substrate, a plurality of NAND strings on the substrate, one or more peripheral devices above the NAND strings, a single crystalline silicon layer above the peripheral devices, and one or more interconnect layers between the peripheral devices and the NAND strings. In some embodiments, the NAND memory device includes a bonding interface at which an array interconnect layer contacts a peripheral interconnect layer.