Anastasios A. Katsetos
3Patents
2h-index
10Co-inventors
41Inventor score
Filing activity: Aug 18, 1999 → Oct 29, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6456104B1 | Method and structure for in-line monitoring of negative bias temperature instability in field effect transistors | Physics | 26 | Expired |
| US6958621B2 | Method and circuit for element wearout recovery | Electricity | 5 | Expired |
| US8855401B2 | Methods and systems involving measuring complex dimensions of silicon devices | Physics | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.