Inventor · Moskovskiy, RU

Anatoly Vedyaev

2Patents
2h-index
6Co-inventors
33Inventor score

Filing activity: Oct 23, 2000 → Oct 13, 2006

Most-cited inventions

PatentTitleAreaCited byStatus
US7821818B2 Magnetoresistive tunnel junction magnetic device and its application to MRAM Electricity 40 Active
US6462641B1 Magnetoresistor with tunnel effect and magnetic sensor using same Physics 38 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.