Magnetoresistor with tunnel effect and magnetic sensor using same
US6462641B1 · kind B1 · utility
38Cited by
7References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2000 |
| Grant date | Oct 8, 2002 |
| Priority date | — |
| Expiry date | Oct 23, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Tunnel effect magnetoresistance comprising, in the form of a stack:a first layer (12) of free magnetisation magnetic material,a “barrier” layer (16), composed of an electrically insulating material, anda second layer (14) of trapped magnetisation magnetic material,According to the invention, the thickness of the first layer (12) of magnetic material is less than 10 nm.The invention may be particularly applied to the manufacture of magnetic data read heads.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.