Bi Jang
3Patents
2h-index
13Co-inventors
37Inventor score
Filing activity: May 2, 2002 → May 7, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7910491B2 | Gapfill improvement with low etch rate dielectric liners | Electricity | 86 | Active |
| US6756313B2 | Method of etching silicon nitride spacers with high selectivity relative to oxide in a high density plasma chamber | Electricity | 14 | Expired |
| US7754610B2 | Process for etching tungsten silicide overlying polysilicon particularly in a flash memory | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.