Bo Breitholtz
1Patents
1h-index
3Co-inventors
25Inventor score
Filing activity: Jun 15, 1999 → Jun 15, 1999
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6313488A | Bipolar transistor having a low doped drift layer of crystalline SiC | Electricity | 26 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.