Bipolar transistor having a low doped drift layer of crystalline SiC

US6313488A · kind A · utility

Assignee

• ABB RESEARCH LTD. · CH

Inventors

• Mietek Bakowski · Gately Drive, SE
• Bo Breitholtz
• Ulf Gustafsson · Linköping, SE
• Lennart Zdansky

Key dates

• Filing date: Jun 15, 1999
• Grant date: Nov 6, 2001
• Expiry date: Jun 15, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A bipolar transistor having at least a low doped drift layer (14) of crystalline SiC comprises at least one first layer (13) of a semi-conductor material having a wider energy gap between the conduction band and the valence band than an adjacent layer (14) of SiC.