Bruce Alvin Gurney
87Patents
26h-index
95Co-inventors
91Inventor score
Filing activity: Dec 11, 1990 → Aug 25, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5206590A | Magnetoresistive sensor based on the spin valve effect | Physics | 377 | Expired |
| US6347049B1 | Low resistance magnetic tunnel junction device with bilayer or multilayer tunnel barrier | Physics | 215 | Expired |
| US5583725A | Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor | Physics | 214 | Expired |
| US5159513A | Magnetoresistive sensor based on the spin valve effect | Physics | 203 | Expired |
| US5408377A | Magnetoresistive sensor with improved ferromagnetic sensing layer and magnetic recording system using the sensor | Electricity | 202 | Expired |
| US5287238A | Dual spin valve magnetoresistive sensor | Physics | 184 | Expired |
| US5701223A | Spin valve magnetoresistive sensor with antiparallel pinned layer and improved exchange bias layer, and magnetic recording system using the sensor | Physics | 162 | Expired |
| US5422571A | Magnetoresistive spin valve sensor having a nonmagnetic back layer | Electricity | 116 | Expired |
| US6266218A | Magnetic sensors having antiferromagnetically exchange-coupled layers for longitudinal biasing | Physics | 116 | Expired |
| US6280813A | Magnetic recording media with antiferromagnetically coupled ferromagnetic films as the recording layer | Physics | 109 | Expired |
| US5701222A | Spin valve sensor with antiparallel magnetization of pinned layers | Physics | 108 | Expired |
| US5650887A | System for resetting sensor magnetization in a spin valve magnetoresistive sensor | Physics | 93 | Expired |
| US8462461B2 | Spin-torque oscillator (STO) with magnetically damped free layer | Physics | 82 | Active |
| US6653704B1 | Magnetic memory with tunnel junction memory cells and phase transition material for controlling current to the cells | Electricity | 68 | Expired |
| US5341261A | Magnetoresistive sensor having multilayer thin film structure | Physics | 53 | Expired |
| US6686068B2 | Heterogeneous spacers for CPP GMR stacks | Emerging Cross-Sectional Technologies | 48 | Expired |
| US5574605A | Antiferromagnetic exchange coupling in magnetoresistive spin valve sensors | Emerging Cross-Sectional Technologies | 43 | Expired |
| US5696656A | Highly sensitive orthogonal spin valve read head | Physics | 42 | Expired |
| US8259409B2 | Spin torque oscillator sensor | Physics | 39 | Active |
| US8320080B1 | Three-terminal spin-torque oscillator (STO) | Electricity | 37 | Active |
| US8553346B2 | Implementing spin-torque oscillator sensing with enhanced delay control feedback circuit for hard disk drives | Physics | 36 | Active |
| US8654465B2 | Implementing spin-torque oscillator sensing with enhanced demodulator for hard disk drives | Physics | 36 | Active |
| US7522392B2 | Magnetoresistive sensor based on spin accumulation effect with terminal connection at back end of sensor | Physics | 33 | Active |
| US5828530A | Orthogonal spin valve sensor with reduced net field | Physics | 33 | Expired |
| US5598308A | Magnetoresistive sensor having multilayer thin film structure | Physics | 32 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.